Design of Cryogenic SiGe Low-Noise Amplifiers

This paper describes a method for designing cryogenic silicon-germanium (SiGe) transistor low-noise amplifiers and reports record microwave noise temperature, i.e., 2 K, measured at the module connector interface with a 50-Ω generator. A theory for the relevant noise sources in the transistor is derived from first principles to give the minimum possible noise temperature and optimum generator impedance in terms of dc measured current gain and transconductance. These measured dc quantities are then reported for an IBM SiGe BiCMOS-8HP transistor at temperatures from 295 to 15 K. The measured and modeled noise and gain for both a single- and two-transistor cascode amplifier in the 0.2-3-GHz range are then presented. The noise model is then combined with the transistor equivalent-circuit elements in a circuit simulator and the noise in the frequency range up to 20 GHz is compared with that of a typical InP HEMT

A 0.1–5 GHz Cryogenic SiGe MMIC LNA

In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically designed for operation at cryogenic temperatures is presented. At room temperature, the circuit provides greater than 25.8 dB of gain with an average noise temperature (T_e) of 76 K (NF = 1 dB) and S11 of -9 dB for frequencies in the 0.1-5 GHz band. At 15 K, the amplifier has greater than 29.6 dB of gain with an average Te of 4.3 K and S11 of -14.6 dB for frequencies in the 0.1-5 GHz range. To the authors' knowledge, this is the lowest noise ever reported for a silicon integrated circuit operating in the low microwave range and the first matched wideband cryogenic integrated circuit LNA that covers frequencies as low as 0.1 GHz

A 0.5-20GHz quadrature downconverter

A quadrature downconverter with 4GHz IF bandwidth and working over the 0.5–20GHz RF frequency range has been designed, fabricated, and tested. The downconverter uses a frequency doubling and dividing scheme to generate quadrature local oscillator signals from 0.5–17GHz and a pair of Gilbert-cell mixers to perform downconversion. When the IF outputs are combined with a commercial quadrature hybrid, the mixer achieves an image rejection ratio greater than 35dB over the entire band with no on-chip calibration or tuning. The active die area is approximately 0.5 x 1 mm^2

Experimental cryogenic modeling and noise of SiGe HBTs

SiGe devices are an exciting contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedure for extracting a simple equivalent circuit model capable of accurately describing SiGe HBT devices. Next, small-signal modeling results obtained for a 3×0.12×18um^2 SiGe HBT at 15, 40, 77, 120, 200, and 300K are presented along with discussion of performance enhancements due to cooling of the device. Finally, the modeled noise performance is presented as a function of temperature and frequency using the concept of minimum cascaded noise temperature, a figure of merit which incorporates both noise temperature and gain

Microwaves in Quantum Computing

Quantum information processing systems rely on a broad range of microwave technologies and have spurred development of microwave devices and methods in new operating regimes. Here we review the use of microwave signals and systems in quantum computing, with specific reference to three leading quantum computing platforms: trapped atomic ion qubits, spin qubits in semiconductors, and superconducting qubits. We highlight some key results and progress in quantum computing achieved through the use of microwave systems, and discuss how quantum computing applications have pushed the frontiers of microwave technology in some areas. We also describe open microwave engineering challenges for the construction of large-scale, fault-tolerant quantum computers.Comment: Invited review article, to appear in IEEE Journal of Microwaves. 29 pages, 13 figures, $10^{6}$ to $10^{11}$ H

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding Teff of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors’ knowledge, these SiGe LNAs exhibit the lowest broadband noise of any Si-based LNA reported to date

Josephson parametric amplifier with Chebyshev gain profile and high saturation

We demonstrate a Josephson parametric amplifier design with a band-pass impedance matching network based on a third-order Chebyshev prototype. We measured eight amplifiers operating at 4.6 GHz that exhibit gains of 20 dB with less than 1 dB gain ripple and up to 500 MHz bandwidth. The amplifiers further achieve high output saturation powers around -73 dBm based on the use of rf-SQUID arrays as their nonlinear element. We characterize the system readout efficiency and its signal-to-noise ratio near saturation using a Sycamore processor, finding the data consistent with near quantum limited noise performance of the amplifiers. In addition, we measure the amplifiers' intermodulation distortion in two-tone experiments as a function of input power and inter-tone detuning, and observe excess distortion at small detuning with a pronounced dip as a function of signal power, which we interpret in terms of power-dependent dielectric losses.Comment: 14 pages, 10 figure